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HIP1020CKZ 0755-82574204
发布时间： 2014/11/18 11:17:56 | 266 次阅读
The HIP1020 applies a linear voltage ramp to the gates of
any combination of 3.3V, 5V, and 12V MOSFETs. The
internal charge pump doubles a 12V bias or triples a 5V bias
to deliver the high-side drive capability required when using
more cost-effective N-Channel MOSFETs. The 5V/ms ramp
rate is controlled internally and is the proper value to turn on
most devices within the Device-Bay-specified di/dt limit. If a
slower rate is required, the internally-determined ramp rate
can be over ridden using an optional external capacitor.
When VCC = 12V, the charge pump ramps the voltage on
HGATE from zero to 22V in about 4ms. This allows either a
standard or a logic-level MOSFET to become fully enhanced
when used as a high-side switch for 12V power control. The
voltage on LGATE ramps from zero to 16V allowing the
simultaneous control of 3.3V and/or 5V MOSFETs.
When VCC = 5V, the charge pump enters voltage-tripler
mode. The voltage on HGATE ramps from zero to 12.5V in
about 3ms while LGATE ramps to 12.0V. This mode is ideal
for control of high-side MOSFET switches used in 3.3V and
5V power switching when 12V bias is not available.
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